the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. ? 1998, 1999 mos field effect transistor pa1854 p-channel mos field effect transistor for switching data sheet document no. d13295ej2v0ds00 (2nd edition) date published may 2001 ns cp(k) printed in japan description the pa1854 is a switching device which can be driven directly by a 2.5 - v power source. the pa1854 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. features ? can be driven by a 2.5-v power source ? low on-state resistance r ds(on)1 = 60 m ? max. (v gs = ?4.5 v, i d = ?1.5 a) r ds(on)2 = 70 m ? max. (v gs = ?4.0 v, i d = ?1.5 a) r ds(on)3 = 105 m ? max. (v gs = ?2.5 v, i d = ?1.5 a) ? built-in g-s protection diode against esd ordering information part number package pa1854gr-9jg power tssop8 absolute maximum ratings (t a = 25c) drain to source voltage v dss ?12 v gate to source voltage v gss ?10/+5 v drain current (dc) i d(dc) m 3.0 a drain current (pulse) note1 i d(pulse) m 1 2 a total power dissipation note2 p t 2.0 w channel temperature t ch 150 c storage temperature t stg ?55 to +150 c notes 1. pw 10 s, duty cycle 1 % 2. mounted on ceramic substrate of 5000 mm 2 x 1.1 mm remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. package drawing (unit : mm) 14 85 6.4 ?.2 4.4 ?.1 1.0 ?.2 0.145 ?.055 0.1 0.8 max. 3.15 ?.15 3.0 ?.1 0.65 0.10 m 0.27 +0.03 ? 0.08 0.25 0.5 3 +5 ? 3 0.6 +0.15 ? 0.1 1.2 max. 0.1?.05 1.0?.05 1 :drain1 2, 3 :source1 4 :gate1 5 :gate2 6, 7 :source2 8 :drain2 equivalent circuit source1 body diode gate protection diode gate1 drain1 source2 body diode gate protection diode gate2 drain2 the mark shows major revised points.
data sheet d13295ej2v0ds 2 pa1854 electrical characteristics (t a = 25 c) characteristics symbol test conditions min. typ. max. unit drain cut-off current i dss v ds = ? 12 v, v gs = 0 v ? 10 a gate leakage current i gss v gs = m 10 v, v ds = 0 v m 10 a gate cut-off voltage v gs(off) v ds = ? 10 v, i d = ? 1 ma ? 0.5 ? 0.9 ? 1.5 v forward transfer admittance | y fs |v ds = ? 10 v, i d = ? 1.5 a16.0s drain to source on-state resistance r ds(on)1 v gs = ? 4.5 v, i d = ? 1.5 a4660m ? r ds(on)2 v gs = ? 4.0 v, i d = ? 1.5 a4970m ? r ds(on)3 v gs = ? 2.5 v, i d = ? 1.5 a 75 105 m ? input capacitance c iss v ds = ? 10 v 737 pf output capacitance c oss v gs = 0 v 322 pf reverse transfer capacitance c rss f = 1 mhz 195 pf turn-on delay time t d(on) v dd = ? 10 v82ns rise time t r i d = ? 1.5 a 460 ns turn-off delay time t d(off) v gs(on) = ? 4.0 v 860 ns fall time t f r g = 10 ? 1380 ns total gate charge q g v dd = ? 10 v8nc gate to source charge q gs i d = ? 3.0 a2nc gate to drain charge q gd v gs = ? 4.0 v3nc diode forward voltage v f(s-d) i f = 3.0 a, v gs = 0 v0.80v reverse recovery time t rr i f = 1.0 a, v gs = 0 v29ns reverse recovery charge q rr di/dt = 50 a / s6nc test circuit 1 switching time test circuit 2 gate charge pg. r g 0 v gs d.u.t. r l v dd = 1 s duty cycle 1 % v gs wave form i d wave form v gs 10 % 90 % v gs(on) 10 % 0 i d 90 % 90 % t d(on) t r t d(off) t f 10 % r g = 10 ? i d 0 t on t off pg. 50 ? d.u.t. r l v dd i g = 2 ma
data sheet d13295ej2v0ds 3 pa1854 typical characteristics (t a = 25c) gate to source cut-off voltage vs. channel temperature t ch - channel temperature - ?c v gs(off) - gate to source cut-off voltage - v v ds = ? 10 v i d = ? 1 ma ? 50 50 100 0 150 ? 1.5 ? 1.0 ? 0.5 ? 10 ? 1 ? 0.1 ? 0.01 ? 0.001 ? 0.0001 ? 0.00001 0 ? 1 ? 2 ? 3 ? 100 25 ? c 75 ? c t a = 125 ? c v gs - gate to source voltage - v ? 25 ? c v ds = ? 10 v transfer characteristics i d - drain current - a drain current vs. drain to source voltage v ds - drain to source voltage - v i d - drain current - a ? 0.2 0 ? 0.8 ? 1.0 ? 0.4 ? 0.6 ? 5 0 ? 15 ? 10 v gs = ? 4.5 v ? 4.0 v ? 2.5 v forward bias safe operating area ? 10.0 ? 100.0 i d - drain current - a ? 1.0 v ds - drain to source voltage - v ? 100 ? 10 ? 1 ? 0.1 ? 0.1 ? 0.01 single pulse mounted on ceramic substrate of 50cm x 1.1mm p d (fet1) : p d (fet2) = 1:1 2 i d (pulse) i d ( dc ) r ds(on) limited (@v gs = ? 4.5 v) 100 ms 10 ms pw = 1 ms dc 30 150 60 90 20 60 80 40 0 100 120 derating factor of forward bias safe operating area dt - derating factor - % t a - ambient temperature - ? c ? 1 ? 10 ? 100 ? 0.1 v ds = ? 10 v t a = ? 25 ? c 25 ? c 75 ? c 125 ? c i d - drain current - a | y fs | - forward transfer admittance - s 1 10 0.1 0.01 ? 0.01 100 forward transfer admittance vs. drain current
data sheet d13295ej2v0ds 4 pa1854 capacitance vs. drain to source voltage v ds - drain to source voltage - v ciss, coss, crss - capacitance - pf 10 ? 0.1 100 1000 10000 ? 1 ? 10 ? 100 f = 1 mhz c iss c rss c oss 0 20 60 40 80 100 120 ? 2 ? 4 ? 6 ? 8 ? 10 r ds (on) - drain to source on-state resistance - m ? v gs - gate to source voltage - v i d = ? 1.5 a drain to source on-state resistance vs. gate to source voltage drain to source on-state resistance vs. drain current ? 1 ? 0.1 ? 0.01 ? 10 ? 100 i d - drain current - a r ds(on) - drain to source on-state resistance - m ? 20 t a = 125 ? c 75 ? c ? 25 ? c 25 ? c 40 60 80 v gs = ? 4.5 v drain to source on-state resistance vs. drain current ? 1 ? 0.1 ? 0.01 ? 10 ? 100 i d - drain current - a r ds(on) - drain to source on-state resistance - m ? 30 t a = 125 ? c 75 ? c ? 25 ? c 25 ? c 50 70 90 v gs = ? 4.0 v drain to source on-state resistance vs. drain current ? 1 ? 0.1 ? 0.01 ? 10 ? 100 i d - drain current - a r ds(on) - drain to source on-state resistance - m ? 60 t a = 125 ? c 75 ? c ? 25 ? c 25 ? c 70 80 90 100 v gs = ? 2.5 v drain to source on state resistance vs. channel temperature t ch - channel temperature - ? c i d = ? 1.5 a ? 50 0 50 100 150 20 60 80 40 100 r ds (on) - drain to source on-state resistance - m ? ? 4.5 v ? 4.0 v v gs = ? 2.5 v
data sheet d13295ej2v0ds 5 pa1854 0.01 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 source to drain diode forward voltage i f - source to drain current - a v f(s-d) - source to drain voltage - v v gs = 0 v ? 0.1 ? 1 ? 10 i d - drain current - a td (on) , tr, td (off) , tf - switchig time - ns 10000 1000 100 10 td (off) td (on) tf tr switching characteristics v dd = ? 10v v gs ( on ) = ? 4.0v r g = 10 ? q g - gate charge - nc 0 13 579 8 46 210 dynamic input characteristics v gs - gate to source voltage - v 0 ? 1 ? 2 ? 3 ? 4 ? 5 ? 6 v dd = - 10 v i d = - 3.0 a transient thermal resistance vs. pulse width pw - pulse width - s r th(t) - transient thermal resistance - ? c/w 10 0.1 1 100 1000 1 1m 10m 100m 10 100 1000 mounted on ceramic substrate of 50cm x 1.1mm single pulse p d (fet1) : p d (fet2) = 1:1 2 62.5 ? c/w
data sheet d13295ej2v0ds 6 pa1854 [memo]
data sheet d13295ej2v0ds 7 pa1854 [memo]
pa1854 m8e 00. 4 the information in this document is current as of may, 2001. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above). ? ? ? ? ? ?
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